Invention Grant
- Patent Title: Light-emitting element
-
Application No.: US17978252Application Date: 2022-11-01
-
Publication No.: US11997860B2Publication Date: 2024-05-28
- Inventor: Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 12025834 2012.02.09
- Main IPC: H10K50/11
- IPC: H10K50/11 ; C09K11/02 ; C09K11/06 ; H10K50/00 ; H10K50/12 ; H10K50/15 ; H10K50/16 ; H10K50/17 ; H10K85/30 ; H10K85/60 ; H01L31/0232 ; H10K101/00 ; H10K101/10 ; H10K101/30 ; H10K101/40 ; H10K102/00

Abstract:
Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.
Public/Granted literature
- US20230097122A1 Light-Emitting Element Public/Granted day:2023-03-30
Information query