Invention Grant
- Patent Title: Sensor device and semiconductor device
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Application No.: US17281596Application Date: 2019-10-02
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Publication No.: US11997910B2Publication Date: 2024-05-28
- Inventor: Takashi Nakagawa , Takayuki Ikeda , Takahiro Fukutome
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP 18192511 2018.10.11
- International Application: PCT/IB2019/058363 2019.10.02
- International Announcement: WO2020/075009A 2020.04.16
- Date entered country: 2021-03-31
- Main IPC: H10K65/00
- IPC: H10K65/00 ; H10K19/20 ; H10K77/10

Abstract:
A flexible semiconductor device including a light-emitting element and a sensor element is provided. The semiconductor device includes a sensor device, a processor, and a communication device. The sensor device includes a first pixel and a second pixel formed over a flexible substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. Light emitted from the light-emitting element has a peak wavelength. A range of wavelength sensed by the sensor element includes the peak wavelength. A semiconductor layer of the first transistor and a semiconductor layer of the second transistor include the same element. A pixel electrode of the light-emitting element has a function of being electrically connected to the first transistor and a function of blocking diffusion light to the sensor element.
Public/Granted literature
- US20210391388A1 SENSOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2021-12-16
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