Invention Grant
- Patent Title: Method for preparing quantum dots light-emitting diode
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Application No.: US17419694Application Date: 2019-09-17
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Publication No.: US11997911B2Publication Date: 2024-05-28
- Inventor: Jie Zhang , Chaoyu Xiang
- Applicant: TCL TECHNOLOGY GROUP CORPORATION
- Applicant Address: CN Guangdong
- Assignee: TCL TECHNOLOGY GROUP CORPORATION
- Current Assignee: TCL TECHNOLOGY GROUP CORPORATION
- Current Assignee Address: CN Guangdong
- Priority: CN 1811639610.0 2018.12.29
- International Application: PCT/CN2019/106135 2019.09.17
- International Announcement: WO2020/134202A 2020.07.02
- Date entered country: 2021-06-29
- Main IPC: H10K71/00
- IPC: H10K71/00 ; C01G9/08 ; C01G11/00 ; C09K11/56 ; C09K11/88 ; H10K50/115 ; B82Y20/00 ; B82Y40/00 ; H10K50/15 ; H10K50/16

Abstract:
The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.
Public/Granted literature
- US20220085343A1 METHOD FOR PREPARING QUANTUM DOTS LIGHT-EMITTING DIODE Public/Granted day:2022-03-17
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