- Patent Title: Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature
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Application No.: US17690263Application Date: 2022-03-09
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Publication No.: US11997934B2Publication Date: 2024-05-28
- Inventor: Zachariah B. Hennighausen , Kathleen M. McCreary , Olaf M. J. van 't Erve , Berend T. Jonker
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US VA Arlington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US VA Arlington
- Agency: US Naval Research Laboratory
- Agent Stephen T. Hunnius
- Main IPC: H10N70/20
- IPC: H10N70/20 ; B82Y10/00 ; B82Y20/00 ; B82Y40/00 ; G11C7/00 ; H10N70/00
Abstract:
A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi2Se3/WS2 at room temperature, comprising the steps of applying a laser to the Bi2Se3/WS2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi2Se3/WS2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi2Se3/WS2 heterostructure at room temperature.
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