Invention Grant
- Patent Title: Silicon nitride chemical mechanical polishing slurry with silicon nitride removal rate enhancers and methods of use thereof
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Application No.: US17689236Application Date: 2022-03-08
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Publication No.: US11999877B2Publication Date: 2024-06-04
- Inventor: Jimmy Granstrom
- Applicant: FUJIMI INCORPORATED
- Applicant Address: JP Aichi
- Assignee: FUJIMI INCORPORATED
- Current Assignee: FUJIMI INCORPORATED
- Current Assignee Address: JP Aichi
- Agency: Katten Muchin Rosenman LLP
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/3105
Abstract:
The present disclosure relates to relates to silicon nitride (SiN) chemical-mechanical polishing (CMP) compositions with SiN removal rate enhancers. The SiN CMP compositions increase the SiN polishing rate while suppressing the tetratethylorthosilicate (TEOS) polishing rate, thus providing a high SiN/TEOS selectivity ratio and reducing any defects on the surfaces of polished substrates.
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