Invention Grant
- Patent Title: Detection unit, semiconductor film layer inspection apparatus including the same, and semiconductor film layer inspection method using the same
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Application No.: US17945743Application Date: 2022-09-15
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Publication No.: US12000866B2Publication Date: 2024-06-04
- Inventor: Hyoung Sik Kim
- Applicant: EnVigth Co., Ltd.
- Applicant Address: KR Hwaseong-si
- Assignee: EnVigth Co., Ltd.
- Current Assignee: EnVigth Co., Ltd.
- Current Assignee Address: KR Hwaseong-si
- Agency: Rabin & Berdo, P.C.
- Priority: KR 20220048970 2022.04.20 KR 20220071600 2022.06.13
- Main IPC: G01R31/20
- IPC: G01R31/20 ; G01R1/073 ; G01R3/00 ; G01R31/26 ; G01R31/28 ; G01R35/00

Abstract:
The present invention provides a semiconductor film layer inspection apparatus (10) for detecting the electrical characteristics of a semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), and a detection unit used therein. The apparatus includes a base unit (40), a detection unit (200) and a carrier generator (300 300a and 300b). The detection unit (200) includes: a detection probe pin (230) and a detection probe module (202). The detection probe pin (230) includes a detection probe pin body (231) and a detection probe pin contactor unit (233). The detection probe pin contactor unit at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks.
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