Invention Grant
- Patent Title: Integrated circuit including test circuit and method of manufacturing the same
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Application No.: US17857379Application Date: 2022-07-05
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Publication No.: US12000888B2Publication Date: 2024-06-04
- Inventor: Changho Han , Mijeong Lim , Yuncheol Kim , Kwanghun Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20210106181 2021.08.11
- Main IPC: G01R31/317
- IPC: G01R31/317 ; G01R31/30 ; G01R31/3173 ; G01R31/3177 ; G01R31/3183 ; G01R31/3185 ; H01L21/66

Abstract:
An integrated circuit includes first to nth metal layers vertically stacked on a substrate, and a test circuit outputting a test result signal according to a characteristic of each of the first to nth metal layers. The test circuit includes first to nth test circuits for generating a plurality of clock signals. Each clock signal of the plurality of clock signal has a frequency according to a characteristic of a corresponding metal layer among the first to nth metal layers, and n is a natural number.
Public/Granted literature
- US20230049110A1 INTEGRATED CIRCUIT INCLUDING TEST CIRCUIT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-02-16
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