An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying a block family associated with a block comprising the memory page; determining a block family-based read voltage level associated with the block family; performing, using the block family-based read voltage level, a read operation with respect to the memory page; determining, by performing an error correction operation with respect to the memory page, a new read voltage level associated with the block family; and associating, by a last successful read voltage level memory data structure, the new read voltage level as a last the successful read voltage level with the block family.