Invention Grant
- Patent Title: Burst read data storage
-
Application No.: US17845485Application Date: 2022-06-21
-
Publication No.: US12001718B2Publication Date: 2024-06-04
- Inventor: Hui Wang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Harrity & Harrity, LLP
- Priority: CN 2210522845.1 2022.05.13
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Implementations described herein relate to burst data read storage. In some implementations, a controller may receive a write command. The controller may determine whether a burst read flag, included in the write command, is set. The controller may write host data, associated with the write command, to a first type of storage block of the memory device or to a second type of storage block of the memory device based on whether the burst read flag is set.
Public/Granted literature
- US20230367514A1 BURST READ DATA STORAGE Public/Granted day:2023-11-16
Information query