A memory device includes a first block including a first memory cell and a first word line connected to the first memory cell, a second block including a second memory cell and a second word line connected to the second memory cell, and a control circuit. The control circuit applies a first voltage to each of the first and second word lines to supply a first erase pulse having a first erase intensity to each of the first and second blocks, when a first erase operation is executed, and applies the first voltage to the first word line and a second voltage higher than the first voltage to the second word line, to supply the first erase pulse to the first block and a second erase pulse having a second erase intensity less than the first erase intensity to the second block, when a second erase operation is executed.