Invention Grant
- Patent Title: Write circuit of memory device and method of operating the same
-
Application No.: US18074392Application Date: 2022-12-02
-
Publication No.: US12002542B2Publication Date: 2024-06-04
- Inventor: Xiu-Li Yang , Kuan Cheng , He-Zhou Wan , Wei-Yang Jiang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC CHINA COMPANY LIMITED
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC CHINA COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC CHINA COMPANY LIMITED
- Current Assignee Address: TW Hsinchu; CN Shanghai
- Agency: Maschoff Brennan
- Priority: CN 2011311981.3 2020.11.20
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C5/06 ; G11C7/10 ; G11C7/22

Abstract:
A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.
Information query