Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17004202Application Date: 2020-08-27
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Publication No.: US12002686B2Publication Date: 2024-06-04
- Inventor: Satoshi Tsukiyama , Satoru Takaku , Yuki Sugo , Ayana Amano
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20011131 2020.01.27
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/50 ; H01L23/16 ; H01L21/603 ; H01L23/29 ; H01L23/31 ; H01L25/00

Abstract:
A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor chip is provided above the first adhesive layer. The second adhesive layer is provided in at least a part of a first region between the substrate and the first adhesive layer, and the second adhesive layer includes at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and a filler having a lower concentration than that of the first adhesive layer.
Public/Granted literature
- US20210233781A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-07-29
Information query
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