Invention Grant
- Patent Title: Metrology apparatus and method based on diffraction using oblique illumination and method of manufacturing semiconductor device using the metrology method
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Application No.: US17174731Application Date: 2021-02-12
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Publication No.: US12002698B2Publication Date: 2024-06-04
- Inventor: Myungjun Lee , Changhyeong Yoon , Wookrae Kim , Jaehwang Jung , Jinseob Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200083129 2020.07.06
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G01N21/47 ; G01N21/88 ; G01N21/95 ; G06N20/00

Abstract:
Provided are a diffraction-based metrology apparatus having high measurement sensitivity, a diffraction-based metrology method capable of accurately performing measurement on a semiconductor device, and a method of manufacturing a semiconductor device using the metrology method. The diffraction-based metrology apparatus includes a light source that outputs a light beam, a stage on which an object is placed, a reflective optical element that irradiates the light beam onto the object through reflection, such that the light beam is incident on the object at an inclination angle, the inclination angle being an acute angle, a detector that detects a diffracted light beam that is based on the light beam reflected and diffracted by the object and a processor that measures a 3D pupil matrix for the diffracted light beam and analyze the object based on the 3D pupil matrix.
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