Invention Grant
- Patent Title: Semiconductor device, stacked semiconductor device and manufacturing method of semiconductor device
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Application No.: US17884579Application Date: 2022-08-10
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Publication No.: US12002761B2Publication Date: 2024-06-04
- Inventor: Chih-Hang Tung , Chen-Hua Yu , Tung-Liang Shao , Su-Chun Yang , Wen-Lin Shih
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/50 ; H01L21/768 ; H01L23/373 ; H01L25/065
Abstract:
A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.
Public/Granted literature
- US20220384352A1 SEMICONDUCTOR DEVICE, STACKED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2022-12-01
Information query
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