Invention Grant
- Patent Title: Method of producing a semiconductor component and semiconductor component
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Application No.: US17678580Application Date: 2022-02-23
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Publication No.: US12002812B2Publication Date: 2024-06-04
- Inventor: Dirk Meinhold , Steffen Bieselt
- Applicant: Infineon Technologies Dresden GmbH & Co. KG
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH & Co. KG
- Current Assignee: Infineon Technologies Dresden GmbH & Co. KG
- Current Assignee Address: DE Dresden
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2021105476.1 2021.03.08
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/12

Abstract:
A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.
Public/Granted literature
- US20220285402A1 METHOD OF PRODUCING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT Public/Granted day:2022-09-08
Information query
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