Invention Grant
- Patent Title: Solid-state imaging element and solid-state imaging apparatus
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Application No.: US18146674Application Date: 2022-12-27
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Publication No.: US12002826B2Publication Date: 2024-06-04
- Inventor: Hiroaki Matsuo
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP 16177311 2016.09.12
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N25/60 ; H04N25/76 ; H10K19/00 ; H10K39/32

Abstract:
A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.
Public/Granted literature
- US20230326941A1 SOLID-STATE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS Public/Granted day:2023-10-12
Information query
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