A super junction semiconductor device includes a substrate of a first conductive type, the substrate including an active region, a peripheral region surrounding the active region and a transition region interposed between the active region and the peripheral region, an epitaxial layer disposed on the substrate, the epitaxial layer having a the first conductive type, a plurality of pillars extending in a vertical direction and arranged within the epitaxial layer, gate structures disposed on the epitaxial layer in both the active region and the transition region, and the each of the gate structures extending across the epitaxial layer and the pillars in a horizontal direction, and a reverse recovery layer of a second conductive type, the reverse recovery layer having a vertical formation heights different as between on the pillars and on the epitaxial layer, the reverse recovery layer configured to dissipate a reverse recovery current in the transition layer.