Invention Grant
- Patent Title: Semiconductor device and method for producing a substrate for a semiconductor component, and use of indium during production of same
-
Application No.: US18039668Application Date: 2021-11-24
-
Publication No.: US12002859B2Publication Date: 2024-06-04
- Inventor: Jos Boschker , Christiane Frank-Rotsch , Thomas Schroeder , Martin Zorn
- Applicant: JENOPTIK Optical Systems GmbH , Forschungsverbund Berlin e.V.
- Applicant Address: DE Jena
- Assignee: Jenoptik Optical Systems GmbH,Forschungsverbund Berlin e.V.
- Current Assignee: Jenoptik Optical Systems GmbH,Forschungsverbund Berlin e.V.
- Current Assignee Address: DE Jena; DE Berlin
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: DE 2020131850.2 2020.12.01
- International Application: PCT/EP2021/082758 2021.11.24
- International Announcement: WO2022/117405A 2022.06.09
- Date entered country: 2023-05-31
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L29/04 ; H01L29/207
Abstract:
A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 percent and 4 percent.
Public/Granted literature
Information query
IPC分类:
