Invention Grant
- Patent Title: Gate contact structures and cross-coupled contact structures for transistor devices
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Application No.: US17901887Application Date: 2022-09-02
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Publication No.: US12002869B2Publication Date: 2024-06-04
- Inventor: Ruilong Xie , Youngtag Woo , Daniel Chanemougame , Bipul C. Paul , Lars W. Liebmann , Heimanu Niebojewski , Xuelian Zhu , Lei Sun , Hui Zang
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- The original application number of the division: US16804264 2020.02.28
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/28 ; H01L21/8234 ; H01L27/088 ; H01L27/092 ; H01L29/417 ; H01L29/66 ; H01L29/78

Abstract:
One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.
Public/Granted literature
- US20220416054A1 GATE CONTACT STRUCTURES AND CROSS-COUPLED CONTACT STRUCTURES FOR TRANSISTOR DEVICES Public/Granted day:2022-12-29
Information query
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