A semiconductor structure includes vertical stacks located over a substrate, wherein each of the vertical stacks includes from bottom to top, a bottom electrode, a dielectric pillar structure including a lateral opening therethrough, and a top electrode; layer stacks located over the vertical stacks, wherein each of the layer stacks includes an active layer and an outer gate dielectric and laterally surrounds a respective one of the vertical stacks; inner gate electrodes passing through a respective subset of the lateral openings in a respective row of vertical stacks that are arranged along a first horizontal direction; and outer gate electrodes laterally extending along the first horizontal direction and laterally surrounding a respective row of layer stacks.