Invention Grant
- Patent Title: Modular parallel half-bridge integrated assembly with annular layout
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Application No.: US17844748Application Date: 2022-06-21
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Publication No.: US12003188B2Publication Date: 2024-06-04
- Inventor: Haijun Zhao , Guangfeng Xie
- Applicant: BEIJING PESIT POWER INTEGRATION TECHNOLOGY COMPANY LIMITED
- Applicant Address: CN Beijing
- Assignee: BEIJING PESIT POWER INTEGRATION TECHNOLOGY COMPANY LIMITED
- Current Assignee: BEIJING PESIT POWER INTEGRATION TECHNOLOGY COMPANY LIMITED
- Current Assignee Address: CN Beijing
- Agency: Bayramoglu Law Offices LLC
- Priority: CN 1911348159.1 2019.12.24
- Main IPC: H02M7/04
- IPC: H02M7/04 ; H01L23/367 ; H02M7/00 ; H02M7/5387 ; H05K1/18

Abstract:
A modular parallel half-bridge integrated assembly with an annular layout is provided. The assembly includes a plurality of parallel sub-modules to improve a current capacity of the assembly. The sub-modules adopt an annular layout and are connected in parallel to balance currents of the sub-modules. The half-bridge integrated assembly includes a plurality of sub-modules, a plurality of heat sinks, a drive board, a direct current (DC) positive collecting busbar, a DC negative collecting busbar, and an alternating current (AC) collecting busbar. According to the assembly, since each insulated gate bipolar transistor (IGBT) is tightly bound to a capacitor, parasitic inductance of a commutation loop is small, realizing a small voltage overshoot and a fast switching speed for the IGBT module, so as to balance the currents of the sub-modules.
Public/Granted literature
- US20220321023A1 MODULAR PARALLEL HALF-BRIDGE INTEGRATED ASSEMBLY WITH ANNULAR LAYOUT Public/Granted day:2022-10-06
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