Invention Grant
- Patent Title: Double gate transistor device and method of operating
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Application No.: US16722809Application Date: 2019-12-20
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Publication No.: US12003231B2Publication Date: 2024-06-04
- Inventor: Markus Bina , Jens Barrenscheen , Anton Mauder
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee Address: AT Villach
- Agency: Slater Matsil, LLP
- Main IPC: H03K17/567
- IPC: H03K17/567 ; H01L29/08 ; H01L29/10 ; H01L29/20 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/739 ; H01L29/76 ; H01L29/778 ; H01L29/78 ; H03K17/687
Abstract:
In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device.
Information query
IPC分类:
