Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17688482Application Date: 2022-03-07
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Publication No.: US12003236B2Publication Date: 2024-06-04
- Inventor: Ryuji Takahashi , Kazuya Matsuzawa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 21149530 2021.09.14
- Main IPC: H03K19/003
- IPC: H03K19/003 ; H03K19/0185

Abstract:
A semiconductor device includes: an electronic circuit to receive a first signal and transmit a second signal; a power supply circuit to supply a power supply voltage to the electronic circuit; and a correction circuit to change a value of the power supply voltage to switch between a normal and a refresh operation mode. The electronic circuit includes: a first Pch transistor in which a potential of a first gate changes according to the first signal, and a potential of one of the first source and drain changes in response to the power supply voltage; and a first Nch transistor in which the second gate is electrically connected to the first gate, a potential of one of the second source and drain is equal to or lower than a ground potential, and another of the second source and drain is electrically connected to another of the first source and drain.
Public/Granted literature
- US20230080416A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-03-16
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