A 10G rate OLT terminal transceiver integrated chip based on EPON with EML laser includes: a burst mode receiver RX which processes signal amplification and selects one of the two preset channels as a working channel for output through receiving an external command from a host; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGITAL for path selection of the burst mode receiver RX; and a power module POWER, wherein the opening and closing of the two rate channels are controlled by the level judgment unit and the output blocking unit.