Invention Grant
- Patent Title: Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same
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Application No.: US17347810Application Date: 2021-06-15
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Publication No.: US12004348B2Publication Date: 2024-06-04
- Inventor: Yuki Mizutani , Fumiaki Toyama , Masaaki Higashitani
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: THE MARBURY LAW GROUP PLLC
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H10B41/10 ; H10B41/27 ; H10B41/35 ; H10B41/41 ; H10B43/10 ; H10B43/27 ; H10B43/35 ; H10B43/40

Abstract:
A bonded assembly includes a memory die that is bonded to a logic die. The memory die includes a three-dimensional memory array located on a memory-side substrate, memory-side dielectric material layers located on the three-dimensional memory array and embedding memory-side metal interconnect structures and memory-side bonding pads, a backside peripheral circuit located on a backside surface of the memory-side substrate, and backside dielectric material layers located on a backside of the memory-side substrate and embedding backside metal interconnect structures. The logic die includes a logic-side peripheral circuit located on a logic-side substrate, and logic-side dielectric material layers located between the logic-side substrate and the memory die and embedding logic-side metal interconnect structures and logic-side bonding pads that are bonded to a respective one of the memory-side bonding pads.
Public/Granted literature
- US20220399362A1 THREE-DIMENSIONAL MEMORY ARRAY WITH DUAL-LEVEL PERIPHERAL CIRCUITS AND METHODS FOR FORMING THE SAME Public/Granted day:2022-12-15
Information query
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