Invention Grant
- Patent Title: Atomic layer deposition for continuous, high-speed thin films
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Application No.: US16105432Application Date: 2018-08-20
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Publication No.: US12006570B2Publication Date: 2024-06-11
- Inventor: Jeffrey W. Elam , Joseph A. Libera , Angel Yanguas-Gil
- Applicant: UCHICAGO ARGONNE, LLC
- Applicant Address: US IL Chicago
- Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee Address: US IL Chicago
- Agency: FOLEY & LARDNER LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/40 ; C23C16/52 ; C23C16/54
Abstract:
A temporal Atomic Layer Deposition system and method utilizing precursor pulses applied to a moving substrate. The precursor pulses are self-exhausting.
Public/Granted literature
- US20190062912A1 ATOMIC LAYER DEPOSITION FOR CONTINUOUS, HIGH-SPEED THIN FILMS Public/Granted day:2019-02-28
Information query
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