Invention Grant
- Patent Title: Memory device wear leveling
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Application No.: US17659897Application Date: 2022-04-20
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Publication No.: US12009038B2Publication Date: 2024-06-11
- Inventor: Rainer Frank Bonitz
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Harrity & Harrity, LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C16/16 ; G11C16/26 ; G11C16/34

Abstract:
A controller of a memory device may determine that an endurance parameter associated with a wear leveling pool of a memory of the memory device satisfies a threshold. The wear leveling pool includes a plurality of memory blocks of the memory. The controller may divide, based on determining that the endurance parameter satisfies the threshold, the plurality of memory blocks of the wear leveling pool into a first wear leveling pool subset that includes a first subset of the plurality of memory blocks and a second wear leveling pool subset that includes a second subset of the plurality of memory blocks. A first subset of a plurality of data partitions is stored in the first subset of the plurality of memory blocks, and a second subset of the plurality of data partitions is stored in the second subset of the plurality of memory blocks.
Public/Granted literature
- US20230343402A1 MEMORY DEVICE WEAR LEVELING Public/Granted day:2023-10-26
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