Invention Grant
- Patent Title: Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus
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Application No.: US17149696Application Date: 2021-01-14
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Publication No.: US12009183B2Publication Date: 2024-06-11
- Inventor: Keisuke Washio , Masao Nakata , Tatsuya Matsumoto , Junichi Shida
- Applicant: THE JAPAN STEEL WORKS, LTD.
- Applicant Address: JP Tokyo
- Assignee: THE JAPAN STEEL WORKS, LTD.
- Current Assignee: THE JAPAN STEEL WORKS, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Potomac Law Group, PLLC
- Priority: JP 17044079 2017.03.08
- The original application number of the division: US16490529
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/04 ; C23C16/40 ; C23C16/455 ; H01L21/02 ; H01L21/31 ; H10K50/844 ; H10K71/00
Abstract:
In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.
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