Invention Grant
- Patent Title: Semiconductor device and a method making the same
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Application No.: US17431148Application Date: 2021-03-26
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Publication No.: US12009250B2Publication Date: 2024-06-11
- Inventor: Zhan Ying , Qiang Zhang , Yiming Zhu
- Applicant: ChangXin Memory Technologies, Inc.
- Applicant Address: CN Hefei
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN 2010428538.8 2020.05.20
- International Application: PCT/CN2021/083119 2021.03.26
- International Announcement: WO2021/232936A 2021.11.25
- Date entered country: 2021-08-13
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/308 ; H10B12/00
Abstract:
A method for manufacturing a semiconductor structure includes: providing a substrate, the substrate includes a plurality of first trenches and a first pattern having an array of lines each formed between adjacent two of the plurality of first trenches; forming a first dielectric layer to cover at least the sidewalls of each of the lines in the array of the first pattern; and each of the lines in the array of the first pattern is segmented to form elements of a second pattern.
Public/Granted literature
- US20230120791A1 A SEMICONDUCTOR DEVICE AND A METHOD MAKING THE SAME Public/Granted day:2023-04-20
Information query
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