Invention Grant
- Patent Title: Method of manufacturing semiconductor device including laser treatment for contact plug
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Application No.: US17281966Application Date: 2019-08-26
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Publication No.: US12009255B2Publication Date: 2024-06-11
- Inventor: Jeong Do Ryu
- Applicant: RNR LAB INC.
- Applicant Address: KR Seoul
- Assignee: RNR LAB INC.
- Current Assignee: RNR LAB INC.
- Current Assignee Address: KR Seoul
- Agency: McLean IP Global
- Agent Jason Y. Pahng
- Priority: KR 20180118311 2018.10.04
- International Application: PCT/KR2019/010846 2019.08.26
- International Announcement: WO2020/071638A 2020.04.09
- Date entered country: 2021-03-31
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method of manufacturing a semiconductor device comprises providing a substrate; forming an insulating layer on the substrate; etching the insulating layer to form an opening that exposes the substrate; forming a contact plug in the opening and on the insulating layer; forming a metal layer on the contact plug; and irradiating the metal layer with a laser.
Public/Granted literature
- US20210375676A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-12-02
Information query
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