Invention Grant
- Patent Title: Semiconductor package including thermal exhaust pathway
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Application No.: US17358149Application Date: 2021-06-25
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Publication No.: US12009274B2Publication Date: 2024-06-11
- Inventor: Eungkyu Kim , Kyounglim Suk
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Fish & Richardson P.C.
- Priority: KR 20210020382 2021.02.16
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L25/16

Abstract:
A semiconductor package includes; a wiring structure including signal wiring and heat transfer wiring, an active chip on the wiring structure, a signal terminal disposed between the wiring structure and the active chip, a first heat transferring terminal disposed between the wiring structure and the active chip and connected to the heat transfer wiring, a passive chip on the wiring structure, a second heat transferring terminal disposed between the wiring structure and the passive chip and connected to the heat transfer wiring, and a heat spreader on the passive chip.
Public/Granted literature
- US20220262699A1 SEMICONDUCTOR PACKAGE INCLUDING THERMAL EXHAUST PATHWAY Public/Granted day:2022-08-18
Information query
IPC分类: