Invention Grant
- Patent Title: Multi-die FPGA implementing built-in analog circuit using active silicon connection layer
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Application No.: US17421460Application Date: 2020-12-30
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Publication No.: US12009307B2Publication Date: 2024-06-11
- Inventor: Yueer Shan , Yanfeng Xu , Jicong Fan , Yanfei Zhang , Hua Yan
- Applicant: WUXI ESIONTECH CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: WUXI ESIONTECH CO., LTD.
- Current Assignee: WUXI ESIONTECH CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: HSML P.C.
- Priority: CN 2010622764.X 2020.07.01
- International Application: PCT/CN2020/141168 2020.12.30
- International Announcement: WO2022/001062A 2022.01.06
- Date entered country: 2021-07-08
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L25/065 ; H03K19/17728 ; H03K19/17736 ; H03K19/1776 ; H03K19/17764 ; H03K19/17796

Abstract:
The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.
Public/Granted literature
- US20220344268A1 MULTI-DIE FPGA IMPLEMENTING BUILT-IN ANALOG CIRCUIT USING ACTIVE SILICON CONNECTION LAYER Public/Granted day:2022-10-27
Information query
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