Invention Grant
- Patent Title: Solar cells with differentiated p-type and n-type region architectures
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Application No.: US18099802Application Date: 2023-01-20
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Publication No.: US12009441B2Publication Date: 2024-06-11
- Inventor: Seung Bum Rim , Michael C. Johnson
- Applicant: Maxeon Solar Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/0224 ; H01L31/0236 ; H01L31/0352 ; H01L31/0747

Abstract:
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.
Public/Granted literature
- US20230155039A1 SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES Public/Granted day:2023-05-18
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