Invention Grant
- Patent Title: Structure and configuration of the passively Q-switched diode end-pumped solid-state laser
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Application No.: US17560358Application Date: 2021-12-23
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Publication No.: US12009628B2Publication Date: 2024-06-11
- Inventor: Van Tuan Vu , Trung Anh Hoang , Trung Hieu Le
- Applicant: VIETTEL GROUP
- Applicant Address: VN Ha Noi
- Assignee: VIETTEL GROUP
- Current Assignee: VIETTEL GROUP
- Current Assignee Address: VN Ha Noi
- Agency: patenttm.us
- Priority: VN 02007501 2020.12.24
- Main IPC: H01S3/1115
- IPC: H01S3/1115 ; H01S3/06 ; H01S3/094 ; H01S3/0941 ; H01S3/113 ; H01S3/16 ; H01S3/17

Abstract:
The passively q-switched diode end-pumped solid-state laser is used the gain medium made of Er:Yb doped crystal and the Q-switch made of Co2+:MgAl2O4 crystal. The optical elements are optimally designed for the resonator to achieve pulse energy in a range 0.5 mJ≤E≤2 mJ with the pulse width in a range of 4 ns-15 ns. The resonator is appropriate to use in laser rangefinders, target designator, and other products in military and civilian applications.
Public/Granted literature
- US20220209491A1 STRUCTURE AND CONFIGURATION OF THE PASSIVELY Q-SWITCHED DIODE END-PUMPED SOLID-STATE LASER Public/Granted day:2022-06-30
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