Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17704236Application Date: 2022-03-25
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Publication No.: US12009808B2Publication Date: 2024-06-11
- Inventor: Daisuke Isobe
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JP 20063843 2020.03.31 JP 20095640 2020.06.01
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H02H3/093 ; H03K17/284

Abstract:
Upon an input of an input signal that instructs to turn on a power semiconductor element, a pulse generation circuit generates a pulse. Upon reception of the pulse, a gated latch circuit holds an overcurrent detection state of an overcurrent detection circuit. In response to the input of the input signal and an overcurrent situation having been detected, an overcurrent mode switching circuit outputs an inverted or non-inverted oscillation signal, which is obtained by inverting or not inverting an oscillation signal generated by an oscillation signal generation circuit depending on the overcurrent situation being detected before or after the input of the input signal, and also outputs an inverted oscillation signal obtained by inverting the oscillation signal. A timing determination circuit periodically turns on the power semiconductor element based on the inverted oscillation signal and frequency divided signals obtained by frequency dividing the inverted or non-inverted oscillation signal.
Public/Granted literature
- US20220216863A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-07-07
Information query
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