The present invention provides a drive module for a GaN transistor, including: a first pull-down transistor and a gate ringing and overshoot suppression unit, where the gate ringing and overshoot suppression unit and a first end of the first pull-down transistor are directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is connected between a second end of the first pull-down transistor and the ground; the gate ringing and overshoot suppression unit is configured to: when a gate voltage of the GaN transistor drops, control the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold; and control the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, where the first impedance is less than the second impedance.