Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US17780169Application Date: 2020-02-04
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Publication No.: US12009810B2Publication Date: 2024-06-11
- Inventor: Yukimasa Higashi , Koji Yamamoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2020/004009 2020.02.04
- International Announcement: WO2021/156928A 2021.08.12
- Date entered country: 2022-05-26
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01T15/00 ; H02H7/20

Abstract:
The object of the present disclosure is to provide a power semiconductor device capable of miniaturization. According to the present disclosure power semiconductor device includes a semiconductor switching element configured to control a current flowing through a primary coil composing an ignition coil, and a control circuit configured to control drive of the semiconductor switching element, in which the control circuit includes a first constant current source, a first transistor with an output terminal thereof connected to a control terminal of the semiconductor switching element, a resistor with one end thereof connected to a control terminal of the first transistor and an other end thereof connected to the constant current source, a capacitor with one end thereof connected to the control terminal of the first transistor and an other end thereof grounded, and a second transistor with an input terminal thereof connected to the resistor and an output terminal grounded.
Public/Granted literature
- US20220416786A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2022-12-29
Information query
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