Invention Grant
- Patent Title: Technologies for reduction of memory effects in a capacitor for qubit gate control
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Application No.: US17827570Application Date: 2022-05-27
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Publication No.: US12009813B1Publication Date: 2024-06-11
- Inventor: Sushil Subramanian , Stefano Pellerano , Todor Mladenov , JongSeok Park , Bishnu Prasad Patra
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alliance IP, LLC
- Main IPC: H03K17/92
- IPC: H03K17/92 ; G06N10/40 ; H03M1/66 ; H10N60/10

Abstract:
Technologies for the reduction of memory effects in a capacitor are disclosed. In the illustrative embodiment, a companion chip is connected to a quantum processor. The companion chip provides voltages to gates of qubits on the quantum processor. The companion chip includes an array of capacitors that can be charged to a voltage based on a voltage to be applied to a gate of the quantum processor. The capacitors in the array of capacitors are connected to the gate one at a time, charging up a parasitic capacitance. As more capacitors are switched, the voltage on the gate approaches a target voltage with an exponentially-decreasing voltage error.
Information query
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