Invention Grant
- Patent Title: Systems and methods for selectively modifying gating rate in single photon avalanche diodes
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Application No.: US17505507Application Date: 2021-10-19
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Publication No.: US12010443B2Publication Date: 2024-06-11
- Inventor: Raymond Kirk Price , Michael Bleyer , Christopher Douglas Edmonds
- Applicant: Microsoft Technology Licensing, LLC
- Applicant Address: US WA Redmond
- Assignee: Microsoft Technology Licensing, LLC
- Current Assignee: Microsoft Technology Licensing, LLC
- Current Assignee Address: US WA Redmond
- Agency: Workman Nydegger
- Main IPC: H04N25/59
- IPC: H04N25/59 ; H04N25/587 ; H04N25/63

Abstract:
A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable photon detection over a frame capture time period. The first plurality of gate operations is performed at a first gating rate such that the first plurality of gate operations comprises a first quantity of gate operations performed over the frame capture time period. The system is further configurable to define a second gating rate based on the first frame metadata and capture a second image frame by performing a second plurality of gate operations to configure the SPAD array to enable photon detection at the second gating rate.
Public/Granted literature
- US20230123494A1 SYSTEMS AND METHODS FOR SELECTIVELY MODIFYING GATING RATE IN SINGLE PHOTON AVALANCHE DIODES Public/Granted day:2023-04-20
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