Invention Grant
- Patent Title: Memory device and manufacturing method therefor
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Application No.: US17316794Application Date: 2021-05-11
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Publication No.: US12010929B2Publication Date: 2024-06-11
- Inventor: Tae Joo Park , Dae Woong Kim , Tae Jun Seok , Hye Rim Kim
- Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Applicant Address: KR Ansan-Si
- Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Current Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Current Assignee Address: KR Ansan-Si
- Agency: FINCH & MALONEY PLLC
- Priority: KR 20180169696 2018.12.26
- Main IPC: H01L45/00
- IPC: H01L45/00 ; C23C16/40 ; C23C16/455 ; C23C16/52 ; G11C13/00 ; H10N70/00 ; H10N70/20
Abstract:
A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).
Public/Granted literature
- US20210273158A1 MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2021-09-02
Information query
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