Invention Grant
- Patent Title: Methods for forming thin film transistors on a glass substrate and liquid crystal displays formed therefrom
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Application No.: US17040073Application Date: 2019-03-26
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Publication No.: US12013619B2Publication Date: 2024-06-18
- Inventor: Ming-Huang Huang , Robert Bumju Lee , Rajesh Vaddi , Bin Zhu
- Applicant: CORNING INCORPORATED
- Applicant Address: US NY Corning
- Assignee: CORNING INCORPORATED
- Current Assignee: CORNING INCORPORATED
- Current Assignee Address: US NY Corning
- Agent Svetlana Z. Short
- International Application: PCT/US2019/023984 2019.03.26
- International Announcement: WO2019/191031A 2019.10.03
- Date entered country: 2020-09-22
- Main IPC: G02F1/1368
- IPC: G02F1/1368 ; H01L29/786

Abstract:
A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.
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