Invention Grant
- Patent Title: EUV photo masks and manufacturing method thereof
-
Application No.: US17991740Application Date: 2022-11-21
-
Publication No.: US12013630B2Publication Date: 2024-06-18
- Inventor: Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: G03F1/24
- IPC: G03F1/24

Abstract:
A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
Public/Granted literature
- US20230085685A1 EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-03-23
Information query