Invention Grant
- Patent Title: Positive resist material and patterning process
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Application No.: US17376394Application Date: 2021-07-15
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Publication No.: US12013639B2Publication Date: 2024-06-18
- Inventor: Jun Hatakeyama , Naoki Ishibashi , Masayoshi Sagehashi
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP 20136827 2020.08.13
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/004 ; G03F7/20

Abstract:
A positive resist material contains a base polymer containing: a repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond; and a repeating unit having an acid generator shown by any of the following formulae (b1) to (b3). Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials, and smaller dimensional variation; and a patterning process using this inventive positive resist material.
Information query
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