Invention Grant
- Patent Title: Method for removing resist layer, method of forming a pattern and method of manufacturing a package
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Application No.: US17715048Application Date: 2022-04-07
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Publication No.: US12013645B2Publication Date: 2024-06-18
- Inventor: Christine Y Ouyang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: G03F7/42
- IPC: G03F7/42 ; G03F7/00 ; G03F7/004 ; G03F7/027 ; H01L21/027 ; H01L21/308 ; H01L21/311 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L23/528
Abstract:
A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.
Public/Granted literature
- US20220229369A1 METHOD FOR REMOVING RESIST LAYER, METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A PACKAGE Public/Granted day:2022-07-21
Information query
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