Invention Grant
- Patent Title: Ring structure for film resistor
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Application No.: US17579129Application Date: 2022-01-19
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Publication No.: US12015049B2Publication Date: 2024-06-18
- Inventor: Chun-Tsung Kuo , Jiech-Fun Lu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- The original application number of the division: US16789839 2020.02.13
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L49/02

Abstract:
Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes depositing a resistive layer over a substrate. A conductive structure is formed over the resistive layer. A first etch process is performed on the resistive layer to define a resistor segment of the resistive layer and a peripheral region of the resistive layer. The resistor segment is laterally separated from the peripheral region of the resistive layer. The peripheral region continuously laterally wraps around an outer perimeter of the resistor segment.
Public/Granted literature
- US20220149147A1 RING STRUCTURE FOR FILM RESISTOR Public/Granted day:2022-05-12
Information query
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