Invention Grant
- Patent Title: False collectors and guard rings for semiconductor devices
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Application No.: US17710320Application Date: 2022-03-31
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Publication No.: US12015054B2Publication Date: 2024-06-18
- Inventor: Alexei Sadovnikov , Guruvayurappan S. Mathur
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/265 ; H01L21/761 ; H01L29/66 ; H01L29/73
Abstract:
A method includes implanting dopant of a first conductivity type into an epitaxial layer of semiconductor material to form first and second false collector regions adjacent to the surface of the epitaxial layer. The first false collector region is located laterally on a first side of a base region. The base region is formed within the epitaxial layer from dopant of a second conductivity type that is opposite the first conductivity type. The second false collector region is located laterally on a second side of the base region. The second side is opposite the first side of the base region. The base region is a base of a parasitic bipolar junction in an isolation region of an active semiconductor device.
Public/Granted literature
- US20230317774A1 FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES Public/Granted day:2023-10-05
Information query
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