Invention Grant
- Patent Title: Manufacturing method of semiconductor power device
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Application No.: US17622021Application Date: 2020-11-12
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Publication No.: US12015078B2Publication Date: 2024-06-18
- Inventor: Wei Liu , Zhenyi Xu , Zhendong Mao , Xin Wang
- Applicant: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Current Assignee: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Michael Best & Friedrich LLP
- Priority: CN 2011127631.1 2020.10.20
- International Application: PCT/CN2020/128371 2020.11.12
- International Announcement: WO2022/082902A 2022.04.28
- Date entered country: 2021-12-22
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/308 ; H01L29/40 ; H01L29/78
Abstract:
A manufacturing method of a semiconductor power device includes the following steps: An n-type substrate is etched in a self-aligning manner using a first insulating layer, a second insulating layer, and a third insulating layer as a mask to form a second groove in the n-type substrate. A fourth insulating layer and a gate are formed in the second groove.
Public/Granted literature
- US20230268420A1 MANUFACTURING METHOD OF SEMICONDUCTOR POWER DEVICE Public/Granted day:2023-08-24
Information query
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