Invention Grant
- Patent Title: Germanium-based planar photodiode with a compressed lateral peripheral zone
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Application No.: US18483594Application Date: 2023-10-10
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Publication No.: US12015097B2Publication Date: 2024-06-18
- Inventor: Abdelkader Aliane , Hacile Kaya , Zouhir Mehrez
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR 10639 2022.10.14
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/18
Abstract:
The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.
Public/Granted literature
- US20240128393A1 GERMANIUM-BASED PLANAR PHOTODIODE WITH A COMPRESSED LATERAL PERIPHERAL ZONE Public/Granted day:2024-04-18
Information query
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