A radio-frequency module includes a multilayer substrate, a first semiconductor device, and a second semiconductor device. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first semiconductor device includes a first power amplifier circuit. The second semiconductor device includes at least one of a low-noise amplifier circuit, a switching circuit, or a control circuit. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face.