Invention Grant
- Patent Title: Surface acoustic wave devices using piezoelectric film on silicon carbide
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Application No.: US17211094Application Date: 2021-03-24
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Publication No.: US12015392B2Publication Date: 2024-06-18
- Inventor: Shibin Zhang , Ruochen Lu , Steffen Link , Yansong Yang , Songbin Gong
- Applicant: Board of Trustees of the University of Illinois
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Lowenstein Sandler LLP
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/145 ; H03H9/25 ; H03H9/64

Abstract:
An acoustic resonator includes a piezoelectric thin film (PTF) disposed on a carrier substrate. The PTF confines a fundamental shear-horizontal (SH0) surface-acoustic wave (SAW) within the PTF. The acoustic resonator includes an input bus line coupled to an input source and a ground bus line coupled to a ground potential. The acoustic resonator includes a first grating reflector disposed at a first end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes a second grating reflector disposed at a second end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes interdigital transducers (IDTs) disposed between the first grating reflector and the second grating reflector. Each IDT includes an input electrode coupled to the input bus line, and a ground electrode coupled to the ground bus line.
Public/Granted literature
- US20210305965A1 SURFACE ACOUSTIC WAVE DEVICES USING PIEZOELECTRIC FILM ON SILICON CARBIDE Public/Granted day:2021-09-30
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